- Barcha mahsulotlar
- Diskret yarim o'tkazgichlar
- Yagona MOSFET tranzistorlari
-
IPB180N04S400ATMA1
Omborda mavjud; sotuvda mavjud
Min. : 1
Onlayn sotib olish mumkin emasmi? Pastroq ulgurji narxni xohlaysizmi? Iltimos, RFQ yuboring, biz darhol javob beramiz
IPB180N04S400ATMA1 Texnik spetsifikatsiyalar
Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263
Mahsulot atributi | Atribut qiymati |
---|---|
Category | Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari |
Manufacturer | Infineon Technologies |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 16 Weeks |
Mounting Type | Surface Mount |
Number of Pins | 7 |
Operating Temperature | -55°C~175°C TJ |
Published | 2010 |
Part Status | Active |
Number of Terminations | 6 |
Additional Feature | ULTRA-LOW RESISTANCE |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Case Connection | DRAIN |
FET Type | N-Channel |
Vgs(th) (Max) @ Id | 4V @ 230μA |
Input Capacitance (Ciss) (Max) @ Vds | 22880pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 286nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Fall Time (Typ) | 58 ns |
Continuous Drain Current (ID) | 180A |
Max Dual Supply Voltage | 40V |
Avalanche Energy Rating (Eas) | 1250 mJ |
Lead Free | Contains Lead |
Mahsulot atributi | Atribut qiymati |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mount | Surface Mount |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Series | OptiMOS™ |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G6 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 53 ns |
Rds On (Max) @ Id, Vgs | 0.98m Ω @ 100A, 10V |
Halogen Free | Halogen Free |
Current - Continuous Drain (Id) @ 25°C | 180A Tc |
Rise Time | 24ns |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 67 ns |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.00098Ohm |
RoHS Status | ROHS3 Compliant |
IPB180N04S400ATMA1 Hujjatlar
Ma'lumotlar jadvallari va ishlab chiqaruvchi hujjatlarini yuklab oling IPB180N04S400ATMA1
-
Ma'lumotlar jadvallari
Boshqalar o'z ichiga oladi "IPB18" qismlar
Quyidagi qismlar o'z ichiga oladi 'IPB18'
# qism | Ishlab chiqaruvchi | Turkum | Mavjudligi |
---|---|---|---|
IPB180N03S4L-01 | INFINEON | Ixtisoslashtirilgan Hot IClar | 1393 |
IPB180N03S4L-01 MOS | International Rectifier (Infineon Technologies) | Ixtisoslashtirilgan Hot IClar | 2019 |
IPB180N03S4L-H0 | INFINEO | Ixtisoslashtirilgan Hot IClar | 5417 |
IPB180N03S4L-H0 (4N03LH | INFINEO | Ixtisoslashtirilgan Hot IClar | 2523 |
IPB180N03S4L-H0 (4N03LH0) | INFINEON | Ixtisoslashtirilgan Hot IClar | 2587 |
IPB180N03S4L-H0(4N03LH0) | International Rectifier (Infineon Technologies) | Ixtisoslashtirilgan Hot IClar | 584 |
IPB180N03S4L01ATMA1 | International Rectifier (Infineon Technologies) | Tranzistorlar - FETlar, MOSFETlar - yagona | 2583 |
IPB180N03S4L01ATMA1 | Infineon Technologies | Yagona MOSFET tranzistorlari | |
IPB180N03S4LH0ATMA1 | International Rectifier (Infineon Technologies) | Tranzistorlar - FETlar, MOSFETlar - yagona | 2779 |
IPB180N03S4LH0ATMA1 | Infineon Technologies | Yagona MOSFET tranzistorlari |
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IPB180N04S400ATMA1 brend ishlab chiqaruvchilari: Infineon Technologies, Bonchip Aksiya, IPB180N04S400ATMA1 mos yozuvlar narxi. IPB180N04S400ATMA1 parametrlari, IPB180N04S400ATMA1 PDF ma'lumotlar jadvali va pin diagramma tavsifi yuklab olish. Siz foydalanishingiz mumkin IPB180N04S400ATMA1 Pluggable Connectors, DSP Datesheet PDF, toping IPB180N04S400ATMA1 pin diagrammasi va elektron diagrammasi va funktsiyadan foydalanish usuli, IPB180N04S400ATMA1 elektron darsliklar. dan yuklab olishingiz mumkin Bonchip.
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Elektron pochta : [email protected]
Manzil : D1 6th floor,Lehui Center,Jihua Road 489 Longgang District, Shenzhen-518129, China
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