IPB180N04S400ATMA1 Texnik spetsifikatsiyalar

Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Active
Number of Terminations 6
Additional Feature ULTRA-LOW RESISTANCE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 300W Tc
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 230μA
Input Capacitance (Ciss) (Max) @ Vds 22880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 286nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 58 ns
Continuous Drain Current (ID) 180A
Max Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 1250 mJ
Lead Free Contains Lead
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 53 ns
Rds On (Max) @ Id, Vgs 0.98m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 180A Tc
Rise Time 24ns
Vgs (Max) ±20V
Turn-Off Delay Time 67 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.00098Ohm
RoHS Status ROHS3 Compliant
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