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IPB120P04P4L03ATMA1 Texnik spetsifikatsiyalar

IPB120P04P4L03ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Vgs(th) (Max) @ Id 2.2V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 234nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±16V
Turn-Off Delay Time 85 ns
Threshold Voltage -1.7V
Max Dual Supply Voltage -40V
Drain to Source Breakdown Voltage -40V
Avalanche Energy Rating (Eas) 78 mJ
Height 4.7mm
Lead Free Contains Lead
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series OptiMOS™
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Power Dissipation 136W
Turn On Delay Time 21 ns
Rds On (Max) @ Id, Vgs 3.1m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 57 ns
Continuous Drain Current (ID) -120A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0052Ohm
Pulsed Drain Current-Max (IDM) 480A
Max Junction Temperature (Tj) 175°C
RoHS Status ROHS3 Compliant
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IPB120P04P4L03ATMA1 Hujjatlar

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Boshqalar o'z ichiga oladi   "IPB12"   qismlar

Quyidagi qismlar o'z ichiga oladi  'IPB12' 

# qism Ishlab chiqaruvchi Turkum Mavjudligi
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IPB120N04S4-01 INF Ixtisoslashtirilgan Hot IClar 9380
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IPB120N04S401ATMA1 Infineon Technologies Yagona MOSFET tranzistorlari
IPB120N04S402ATMA1 International Rectifier (Infineon Technologies) Tranzistorlar - FETlar, MOSFETlar - yagona 2692

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IPB120P04P4L03ATMA1 brend ishlab chiqaruvchilari: Infineon Technologies, Bonchip Aksiya, IPB120P04P4L03ATMA1 mos yozuvlar narxi. IPB120P04P4L03ATMA1 parametrlari, IPB120P04P4L03ATMA1 PDF ma'lumotlar jadvali va pin diagramma tavsifi yuklab olish. Siz foydalanishingiz mumkin IPB120P04P4L03ATMA1 Pluggable Connectors, DSP Datesheet PDF, toping IPB120P04P4L03ATMA1 pin diagrammasi va elektron diagrammasi va funktsiyadan foydalanish usuli, IPB120P04P4L03ATMA1 elektron darsliklar. dan yuklab olishingiz mumkin Bonchip.
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