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IPA65R225C7XKSA1 Texnik spetsifikatsiyalar

MOSFET N-CH 650V TO220-3

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 996pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 41A
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ C7
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 29W Tc
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 225m Ω @ 4.8A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 7A Tc
Rise Time 6ns
Vgs (Max) ±20V
Turn-Off Delay Time 48 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.225Ohm
Avalanche Energy Rating (Eas) 48 mJ
Lead Free Lead Free
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