IKZ75N65EL5XKSA1 Texnik spetsifikatsiyalar

IGBT 650V 100A TO247-4

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona IGBTlar
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop™ 5
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 100A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 75A, 23 Ω, 15V
Switching Frequency 50Hz
Gate Charge 436nC
Td (on/off) @ 25°C 120ns/275ns
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-247-4
Operating Temperature -40°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Max Power Dissipation 536W
Terminal Form THROUGH-HOLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Case Connection COLLECTOR
Power - Max 536W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 59 ns
Turn On Time 133 ns
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A
Turn Off Time-Nom (toff) 474 ns
Current - Collector Pulsed (Icm) 300A
Switching Energy 1.57mJ (on), 3.2mJ (off)
Lead Free Lead Free
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