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BSO612CVGHUMA1 Texnik spetsifikatsiyalar

MOSFET N/P-CH 60V 2A 8-SOIC

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / MOSFET tranzistorlar massivlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Part Status Obsolete
Number of Terminations 8
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 3A
Base Part Number BSO612
Number of Elements 2
Power Dissipation 2W
Rds On (Max) @ Id, Vgs 120m Ω @ 3A, 10V
Halogen Free Not Halogen Free
Current - Continuous Drain (Id) @ 25°C 3A 2A
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 2A
Max Dual Supply Voltage -60V
Avalanche Energy Rating (Eas) 47 mJ
FET Feature Standard
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 1999
JESD-609 Code e4
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Vgs(th) (Max) @ Id 4V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
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