BSB012NE2LX Texnik spetsifikatsiyalar

BSB012NE2LX datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Obsolete
Number of Terminations 2
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Pin Count 2
Number of Elements 1
Power Dissipation-Max 2.8W Ta 57W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 37A Ta 170A Tc
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.6 ns
Continuous Drain Current (ID) 56A
Drain Current-Max (Abs) (ID) 39A
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 285 mJ
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 3-WDSON
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
JESD-30 Code R-MBCC-N2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Turn-Off Delay Time 34 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0012Ohm
DS Breakdown Voltage-Min 25V
Radiation Hardening No
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