BFP840ESDH6327XTSA1 Texnik spetsifikatsiyalar

RF Bipolar Transistors RF BIP TRANSISTORS

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / RF BJT tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case SC-82A, SOT-343
Weight 6.406992mg
Operating Temperature 150°C TJ
Published 2013
Part Status Active
Number of Terminations 4
Additional Feature LOW NOISE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation 75mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 35mA
Collector Emitter Breakdown Voltage 2.25V
Transition Frequency 80MHz
Collector Base Voltage (VCBO) 2.9V
Continuous Collector Current 35mA
Height 800μm
Width 1.25mm
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 75mW
Terminal Form GULL WING
Frequency 80GHz
Base Part Number BFP840
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA 1.8V
Gain 18.5dB
Max Breakdown Voltage 2.25V
Emitter Base Voltage (VEBO) 2.9V
Noise Figure (dB Typ @ f) 0.85dB @ 5.5GHz
Length 2mm
RoHS Status ROHS3 Compliant
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Boshqalar o'z ichiga oladi   "BFP84"   qismlar

Quyidagi qismlar o'z ichiga oladi  'BFP84' 

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