BFP650 Texnik spetsifikatsiyalar

BFP650 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / RF BJT tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Bulk
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 4
Terminal Finish MATTE TIN
Subcategory Other Transistors
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number BFP650
JESD-30 Code R-PDSO-G4
Operating Temperature (Max) 150°C
Configuration SINGLE
Power - Max 500mW
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 80mA 3V
Voltage - Collector Emitter Breakdown (Max) 4.5V
Transition Frequency 37000MHz
Power Dissipation-Max (Abs) 0.5W
Collector-Base Capacitance-Max 0.4pF
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON GERMANIUM
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW NOISE
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Case Connection EMITTER
Transistor Application AMPLIFIER
Transistor Type NPN
Gain 10.5dB ~ 21.5dB
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 37GHz
Highest Frequency Band C B
Noise Figure (dB Typ @ f) 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
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