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AUIRLU3114Z Texnik spetsifikatsiyalar

MOSFET NCH 40V 130A IPAK

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series Automotive, AEC-Q101, HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 140W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 130A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 42A
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 260 mJ
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~175°C TJ
Published 2015
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.9m Ω @ 42A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 130A
Drain-source On Resistance-Max 0.0065Ohm
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
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