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AUIRL7732S2TR Texnik spetsifikatsiyalar

MOSFET N-CH 40V 14A DIRECTFET

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2011
Part Status Active
Number of Terminations 3
Additional Feature HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.6m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0066Ohm
Pulsed Drain Current-Max (IDM) 230A
REACH SVHC No SVHC
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric SC
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 2.2W Ta 41W Tc
Power Dissipation 2.2W
Turn On Delay Time 21 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 50μA
Current - Continuous Drain (Id) @ 25°C 14A Ta
Rise Time 123ns
Vgs (Max) ±16V
Turn-Off Delay Time 22 ns
Threshold Voltage 1.8V
Drain Current-Max (Abs) (ID) 58A
Drain to Source Breakdown Voltage 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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