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AUIRGR4045DTRL Texnik spetsifikatsiyalar

IGBT 600V 12A 77W DPAK

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona IGBTlar
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number IRGR4045
Qualification Status Not Qualified
Rise Time-Max 15ns
Case Connection COLLECTOR
Power - Max 77W
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252AA
Current - Collector (Ic) (Max) 12A
Turn On Time 38 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
IGBT Type Trench
Current - Collector Pulsed (Icm) 18A
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2011
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Transistor Application POWER CONTROL
Reverse Recovery Time 74ns
Voltage - Collector Emitter Breakdown (Max) 600V
Power Dissipation-Max (Abs) 77W
Test Condition 400V, 6A, 47 Ω, 15V
Turn Off Time-Nom (toff) 127 ns
Gate Charge 19.5nC
Td (on/off) @ 25°C 27ns/75ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 22ns
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