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AUIRF1010EZSTRL Texnik spetsifikatsiyalar

MOSFET N-CH 60V 75A D2PAK

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 90ns
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Length 10.668mm
Radiation Hardening No
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PDSO-G2
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 51A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 54 ns
Continuous Drain Current (ID) 75A
Drain-source On Resistance-Max 0.0085Ohm
Height 4.826mm
Width 9.3472mm
RoHS Status ROHS3 Compliant
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